Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires
نویسندگان
چکیده
منابع مشابه
Indium Nanowires Synthesized at Ultra - fast Rate
[*] Prof. K. H. Oh, S. S. Oh, D. H. Kim, Prof. M. Kim, Prof. E. Yoon Department of Materials Science and Engineering, Seoul National University Seoul, 151-744 (Korea) E-mail: [email protected] Prof. J. W. Hutchinson, Dr. M. -W. Moon, Dr. A. Vaziri School of Engineering and Applied Sciences, Harvard University Cambridge, MA 02138 (USA) E-mail: [email protected] Dr. M. -W. Moon Future F...
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This article summarizes some of the critical features of pure indium antimonide nanowires (InSb NWs) growth and their potential applications in the industry. In the first section, historical studies on the growth of InSb NWs have been presented, while in the second part, a comprehensive overview of the various synthesis techniques is demonstrated briefly. The major emphasis of current review is...
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Thermophotovoltaic (TPV) cells are semiconductor devices which convert radiated heat directly into electricity. This work investigates extending the operational wavelength of such devices into the long-wavelength infrared regime. Specifically, this work explores the use a barrier layer inserted into a p-n junction to suppress recombination pathways. Dark current simulations have been performed ...
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Because of the strong spin-orbit interaction in indium antimonide, orbital motion and spin are no longer separated. This enables fast manipulation of qubit states by means of microwave electric fields. We report Rabi oscillation frequencies exceeding 100 MHz for spin-orbit qubits in InSb nanowires. Individual qubits can be selectively addressed due to intrinsic differences in their g factors. B...
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ژورنال
عنوان ژورنال: Nature Communications
سال: 2019
ISSN: 2041-1723
DOI: 10.1038/s41467-019-09606-y